WP2 – SiC semiconductor material and devices

Lead Beneficiary Start month End month
HE 1 40

Objectives

  • Demonstrate and deliver innovative/state-of-the-art SiC epi wafers with reusable mechanical substrate for 15kV IGBT fabrication;
  • Design, fabricate and test SiC high-k IGBTs and diodes rated for 15KV applications;
  • Evaluate high-k gate dielectric;
  • Evaluate the potential for reduced cost of SiC-based semiconductors, through innovative and improved SiC material and IGBT/MOSFET design (RC-IGBT) and processing

Tasks

Task# Task name Task leader Participants
2.1 SiC epi wafers (M1-M36) II-VI HE, CSIC
2.2 Modeling design and process optimization (M1-M30) UCAM CSIC, HE, II-VI
2.3 SiC IGBTs, MOSFETs and modules (M9-M40) HE CSIC, UCAM, II-VI, DeepC

Deliverables

Deliverable# Deliverable name Lead beneficiary Type Due date (in months)
D2.1 15kV rated epilayers with high lifetime and low BPD density II-VI Demonstrator, pilot, prototype 40
D2.2 Report on IGBT and RC-IGBT design, and related mask set UCAM Document, report 24
D2.3 3.3kV MOSFET SiC modules delivery HE Demonstrator, pilot, prototype 24
D2.4 15kV IGBT dies available for packaging HE Demonstrator, pilot, prototype 31

Milestones

Milestone# Milestone name Lead beneficiary Means of verification Due date (in months)
4 Splitting method optimize II-VI Split Substrate re-use for epi growth 15