Publications

Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10 kV

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

CO2 Footprint of Medium Voltage DC Solid State Transformer

Driving the Electric revolution with SiC IGBTs

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Development of 15kV SiC-IGBT technology at Hitachi Energy

Influence of the Mission Profile on the Selection of the Leakage Inductance for DAB converter

Integrated Short-Circuit Protection Design Based on Dual-Channel Gate Driver for Series Connected Medium-Voltage SiC MOSFETs

Pushing the limits: Advanced SiC detectors for operation in harsh environments

Solid insulation electrical endurance assessment under square voltage

Ultra High Voltage Power Electronics | ECPE Hybrid Workshop